
Si4310BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by R DS(on) *
10
1 ms
1
10 ms
100 ms
0.1
0.01
T C = 25 C
Single P u lse
1s
10 s
DC
0.1
1 10 100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Case
2
1
D u ty Cycle = 0.5
0.2
N otes:
t 1
0.1
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 92 C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.01
10 -4
10 -3
10 -2
10 -1
1
1 0
100
6 0 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
D u ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
1 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
www.vishay.com
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